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P1604ES - P-Channel Field Effect Transistor

This page provides the datasheet information for the P1604ES, a member of the P1604ES-NIKO P-Channel Field Effect Transistor family.

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Datasheet Details

Part number P1604ES
Manufacturer NIKO-SEM
File Size 149.32 KB
Description P-Channel Field Effect Transistor
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NIKO-SEM P-Channel Enhancement Mode Field P1604ES Effect Transistor TO-263 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 16mΩ ID -65A ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1,2 TC = 25 °C TC = 100°C Avalanche Current Avalanche Energy L = 0.1 mH Power Dissipation TC = 25 °C TC = 100°C Operating Junction & Storage Temperature Range VDS VGS ID IDM IAS EAS PD Tj, Tstg 123 1. GATE 2. DRAIN 3.SOURCE LIMITS -40 ±20 -65 -42 -120 -46 107 104 41 -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RθJC 1Pulse width limited by maximum junction temperature.
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