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P1606BT - N-Channel Transistor

This page provides the datasheet information for the P1606BT, a member of the P1606BT-NIKO N-Channel Transistor family.

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Datasheet Details

Part number P1606BT
Manufacturer NIKO-SEM
File Size 626.95 KB
Description N-Channel Transistor
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Full PDF Text Transcription

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NIKO-SEM N-Channel Logic Level Enhancement P1606BT Mode Field Effect Transistor TO-220 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 18.5mΩ ID 42A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1,2 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RJc Junction-to-Ambient RJA 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. TYPICAL 1.GATE 2.DRAIN 3.
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