• Part: P2206BD
  • Description: N-Channel Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: NIKO-SEM
  • Size: 365.65 KB
Download P2206BD Datasheet PDF
NIKO-SEM
P2206BD
P2206BD is N-Channel Enhancement Mode Field Effect Transistor manufactured by NIKO-SEM.
- Part of the P2206BD-NIKO comparator family.
NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 22.5mΩ ID 32A ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C L = 0.1m H TC = 25 °C TC = 100 °C VDS VGS IDM IAS EAS PD TJ, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RJC Junction-to-Ambient RJA 1Pulse width limited by maximum junction temperature. TYPICAL 1. GATE 2. DRAIN 3. SOURCE LIMITS 60 ±20 32 20 100 26 33.8 50 20 -55 to 150 UNITS V V A m J W °C MAXIMUM 2.5 62.5 UNITS °C /...