P2206BD - N-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM

Download the P2206BD datasheet PDF. This datasheet also covers the P2206BD-NIKO variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

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P2206BD n-channel enhancement mode field effect transistor by NIKO-SEM - Datasheet Preview — Note: The manufacturer provides a single datasheet file (P2206BD-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	P2206BD
Manufacturer	NIKO-SEM
File Size	365.65 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	P2206BD Datasheet

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Other Datasheets by NIKO-SEM

Part Number	Description
P2206BK	N-Channel MOSFET
P2206BT	N-Channel Transistor
P2206BTF	N-Channel Transistor
P2203BEB	N-Channel Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM N-Channel Enhancement Mode P2206BD Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 22.5mΩ ID 32A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C L = 0.1mH TC = 25 °C TC = 100 °C VDS VGS ID IDM IAS EAS PD TJ, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RJC Junction-to-Ambient RJA 1Pulse width limited by maximum junction temperature. TYPICAL 1. GATE 2. DRAIN 3. SOURCE LIMITS 60 ±20 32 20 100 26 33.