P2206BD Datasheet and Specifications PDF

P2206BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 22.5mΩ @VGS = 10V ID 32A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST COND.

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NIKO-SEM N-Channel Enhancement Mode P2206BD Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 22.5mΩ ID 32A D G S ABSOLUTE MAXIMUM RATINGS (TA .

oltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance1 V(BR)DSS VGS(th) IGSS IDSS RDS(ON) VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 48V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125 °C VGS = 4.5V, ID = 12A VGS = 10V ,.