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NIKO-SEM
Dual N-Channel Enhancement Mode Field Effect Transistor
P2503HVG
SOP-8 Lead Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30 25m
ID 7A
G : GATE D : DRAIN S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Power Dissipation Junction & Storage Temperature Range
TC = 25 °C TC = 70 °C
TC = 25 °C TC = 70 °C
VDS VGS ID IDM PD Tj, Tstg
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle ≤ 1%
TYPICAL
LIMITS 30 ±20 7 6 20 2 1.3
-55 to 150
UNITS V V
A
W °C
MAXIMUM 62.
P2503HVG Datasheet
