Full PDF Text Transcription for P2503HVG (Reference)
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P2503HVG. For precise diagrams, and layout, please refer to the original PDF.
P2503HVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 25mΩ @VGS = 10V ID 7A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)...
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A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1,2 TA = 25 °C TA = 70 °C ID IDM 7 5 30 Avalanche Current IAS 20 Avalanche Energy L = 0.1mH EAS 20 Power Dissipation TA = 25 °C TA = 70 °C PD 2 1.3 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient3 RqJA 63 °C / W 1Pulse width limited by maximum junction temperature. 2Limited only by m
P2503HVG Datasheet
