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P2503HVG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 25mΩ @VGS = 10V
ID 7A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1,2
TA = 25 °C TA = 70 °C
ID IDM
7 5 30
Avalanche Current
IAS 20
Avalanche Energy
L = 0.1mH
EAS
20
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2 1.3
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM UNITS
Junction-to-Ambient3
RqJA
63 °C / W
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
P2503HVG Datasheet
