Click to expand full text
P2504EI
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
25.8mΩ @VGS = -10V
ID -30A
TO-251
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 70 °C
ID IDM
-30 -24 -65
Power Dissipation
TC = 25 °C TC = 70 °C
PD
42 27
Operating Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.)
TJ, TSTG TL
-55 to 150 275
UNITS V
A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 3 75
UNITS °C / W
REV 1.
P2504EI Datasheet
