Datasheet4U Logo Datasheet4U.com

P3606BK - N-Channel Transistor

📥 Download Datasheet

Datasheet preview – P3606BK

Datasheet Details

Part number P3606BK
Manufacturer NIKO-SEM
File Size 367.49 KB
Description N-Channel Transistor
Datasheet download datasheet P3606BK Datasheet
Additional preview pages of the P3606BK datasheet.

📁 Similar Datasheet

  • P3606BD - N-Channel Transistor (UNIKC)
  • P3606HK - MOSFET (UNIKC)
  • P3602AA - SIDACtor Protection Thyristors (Littelfuse)
  • P3602AB - SIDACtor Protection Thyristors (Littelfuse)
  • P3602AC - SIDACtor Protection Thyristors (Littelfuse)
  • P3602ACMC - SIDACtor Protection Thyristors (Littelfuse)
  • P3602CAL - Compak TwinCHIP SIDACtor Device (Littelfuse)
  • P3602CBL - Compak TwinCHIP SIDACtor Device (Littelfuse)
  • P366IVN01.1 - TFT LCD (AUO)
  • P368 - CdS photoconductive cell (Hamamatsu Corporation)
Other Datasheets by NIKO-SEM
  • P3606BD - N-Channel Field Effect Transistor
  • P3606HK - Dual N-Channel Transistor

Full PDF Text Transcription

Click to expand full text
NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P3606BK PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 40mΩ ID 17A D G S D DDD #1 S S S G G. GATE D. DRAIN S. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Continuous Drain Current TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy L = 0.1mH Power Dissipation TC = 25 °C TC = 100 °C Power Dissipation3 TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VDS VGS ID IDM ID IAS EAS PD PD Tj, Tstg LIMITS 60 ±20 17 11 40 6 5 17.8 15.
Published: |