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P3606HK
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 38mΩ @VGS = 10V
ID 15A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current3 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
15 ID 10 IDM 40
Continuous Drain Current
TA = 25 °C TA = 70 °C
5 ID 4
Avalanche Current
IAS 18.6
Avalanche Energy
L = 0.1mH
EAS 17.3
Power Dissipation
TC = 25 °C TC = 100 °C
20.8 PD 8
Power Dissipation
TA = 25 °C TA = 70 °C
2.3 PD 1.
P3606HK Datasheet
