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P3710BV - N-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the P3710BV, a member of the P3710BV-NIKO N-Channel Enhancement Mode Field Effect Transistor family.

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Datasheet Details

Part number P3710BV
Manufacturer NIKO-SEM
File Size 221.67 KB
Description N-Channel Enhancement Mode Field Effect Transistor
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NIKO-SEM N-Channel Enhancement Mode P3710BV Field Effect Transistor SOP-8 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 37mΩ ID 5.2A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TA = 25 °C TA = 70 °C L = 1mH TA = 25 °C TA = 70 °C VDS VGS ID IDM IAS EAS PD TJ, Tstg G: GATE D: DRAIN S: SOURCE LIMITS 100 ±20 5.2 4.2 40 16 128 2.3 1.
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