P3710BV Datasheet and Specifications PDF

P3710BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 37mΩ @VGS = 10V ID 5.2A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST COND.

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NIKO-SEM N-Channel Enhancement Mode P3710BV Field Effect Transistor SOP-8 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 37mΩ ID 5.2A D G S ABSOLUTE MAXIMUM RATINGS (TA =.

ise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS RDS(ON) gfs STATIC VGS = 0V, ID = 250A VDS = VGS, ID = 250.