P6006BD Description
TYPICAL MAXIMUM 2.5 75 UNITS °C / W °C / W (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Volt.
| Part number | P6006BD |
|---|---|
| Download | P6006BD Datasheet (PDF) |
| File Size | 476.75 KB |
| Manufacturer | NIKO-SEM |
| Description | N-Channel Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
UNIKC |
P6006BD | N-Channel Transistor |
UNIKC |
P6006BI | N-Channel MOSFET |
UNIKC |
P6006HV | Dual N-Channel MOSFET |
TYPICAL MAXIMUM 2.5 75 UNITS °C / W °C / W (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Volt.