P6006BI Overview
TYPICAL MAXIMUM 2.5 UNITS °C / W (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC LIMITS UNIT MIN TYP MAX Drain-Source Breakdown Voltage Gate Threshol.
P6006BI datasheet by NIKO-SEM.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | P6006BI |
|---|---|
| Datasheet | P6006BI P6006BI-NIKO Datasheet (PDF) |
| File Size | 241.21 KB |
| Manufacturer | NIKO-SEM |
| Description | N-Channel Transistor |
|
|
|
TYPICAL MAXIMUM 2.5 UNITS °C / W (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC LIMITS UNIT MIN TYP MAX Drain-Source Breakdown Voltage Gate Threshol.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
![]() |
P6006BI | N-Channel MOSFET | UNIKC |
![]() |
P6006BD | N-Channel Transistor | UNIKC |
![]() |
P6006HV | Dual N-Channel MOSFET | UNIKC |
| Part Number | Description |
|---|---|
| P6006BD | N-Channel Transistor |
| P6010DDG | N-Channel Transistor |
| P60N03LDG | N-Channel MOSFET |