P6006BI Description
TYPICAL MAXIMUM 2.5 UNITS °C / W (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC LIMITS UNIT MIN TYP MAX Drain-Source Breakdown Voltage Gate Threshol.
| Part number | P6006BI |
|---|---|
| Download | P6006BI Datasheet (PDF) |
| File Size | 241.21 KB |
| Manufacturer | NIKO-SEM |
| Description | N-Channel Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
UNIKC |
P6006BI | N-Channel MOSFET |
UNIKC |
P6006BD | N-Channel Transistor |
UNIKC |
P6006HV | Dual N-Channel MOSFET |
TYPICAL MAXIMUM 2.5 UNITS °C / W (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC LIMITS UNIT MIN TYP MAX Drain-Source Breakdown Voltage Gate Threshol.