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NIKO-SEM
N-Channel Enhancement Mode
P6006BI
Field Effect Transistor
TO-251
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 65mΩ
ID 18A
D G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C TC = 100 °C
L = 0.1mH TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM IAS EAS PD
TJ, Tstg
123
1. GATE 2. DRAIN 3. SOURCE
LIMITS 60 ±20 18 11.8 34 18 16 50 20
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM 2.
P6006BI Datasheet
