P8010BIS Description
NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P8010BIS TO-251(IS) Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 85mΩ ID 15A D G S 123 1. TYPICAL MAXIMUM 2.7 UNITS °C / W (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC MIN LIMITS TYP MAX UNIT Drain-Source Breakdown Voltage Gate.