P8010BIS datasheet by NIKO-SEM.
| Part number | P8010BIS |
|---|---|
| Datasheet | P8010BIS-NIKOSEM.pdf |
| File Size | 303.23 KB |
| Manufacturer | NIKO-SEM |
| Description | N-Channel MOSFET |
|
|
NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P8010BIS TO-251(IS) Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 85mΩ ID 15A D G S 123 1. TYPICAL MAXIMUM 2.7 UNITS °C / W (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC MIN LIMITS TYP MAX UNIT Drain-Source Breakdown Voltage Gate.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
P8010BIS | N-Channel MOSFET | UNIKC |
|
P8010BD | N-Channel Transistor | UNIKC |
|
P8010BT | N-Channel MOSFET | UNIKC |
|
P8010BTF | N-Channel MOSFET | UNIKC |
|
P8010BV | N-Channel MOSFET | UNIKC |
| Part Number | Description |
|---|---|
| P8010BI | N-Channel Enhancement Mode Field Effect Transistor |
| P8010BD | N-Channel Transistor |
| P8010BT | N-Channel Transistor |
| P8010BTF | N-Channel Transistor |
