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NIKO-SEM
N-Channel Enhancement Mode Field Effect Transistor
P8010BIS
TO-251(IS)
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
85mΩ
ID 15A
D
G S
123
1. GATE 2. DRAIN 3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C TC = 100 °C
L = 0.1mH TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM IAS EAS PD
TJ, Tstg
LIMITS 100 ±20 15 9 35 12 7.2 46 18
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM 2.
P8010BIS Datasheet
