P8010BT
P8010BT is N-Channel MOSFET manufactured by UNIKC.
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
85mΩ @VGS = 10V
17A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
Gate-Source Voltage
±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
17 10
Avalanche Current Avalanche Energy2
Power Dissipation
TC = 25 °C TC = 100 °C
54 21
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A m J W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Starting Tj = 25 °C,L=0.1m H,VDD= 50V
SYMBOL Rq...
