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P9515BD - N-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the P9515BD, a member of the P9515BD-NIKO N-Channel Enhancement Mode Field Effect Transistor family.

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Part number P9515BD
Manufacturer NIKO-SEM
File Size 200.17 KB
Description N-Channel Enhancement Mode Field Effect Transistor
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    NIKO-SEM N-Channel Enhancement Mode P9515BD Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 90mΩ ID 18A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C L = 1mH TC = 25 °C TC = 100 °C VDS VGS ID IDM IAS EAS PD TJ, Tstg 1. GATE 2. DRAIN 3. SOURCE LIMITS 150 ±20 18 11 37 8 32 56 22.7 -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RJC Junction-to-Ambient RJA 1Pulse width limited by maximum junction temperature.
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