PA110BEA - N-Channel Field Effect Transistor

NIKO-SEM

Download the PA110BEA datasheet PDF. This datasheet also covers the PA110BEA-NIKO variant, as both devices belong to the same n-channel field effect transistor family and are provided as variant models within a single manufacturer datasheet.

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PA110BEA n-channel field effect transistor by NIKO-SEM - Datasheet Preview — Note: The manufacturer provides a single datasheet file (PA110BEA-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	PA110BEA
Manufacturer	NIKO-SEM
File Size	209.94 KB
Description	N-Channel Field Effect Transistor
Datasheet	PA110BEA Datasheet

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Other Datasheets by NIKO-SEM

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PA110BDA	N-Channel Enhancement Mode Field Effect Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM N-Channel Enhancement Mode PA110BEA Field Effect Transistor PDFN 3x3P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 105mΩ ID 8.5A D G S D D DD #1 S S S G G. GATE D. DRAIN S. SOURCE 100% UIS Tested 100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Continuous Drain Current Avalanche Current TA = 25 °C TA = 70 °C Avalanche Energy L = 1mH Power Dissipation TC = 25 °C TC = 100 °C Power Dissipation3 TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VDS VGS ID IDM ID IAS EAS PD PD Tj, Tstg LIMITS 100 ±20 8.5 5.4 15 3.5 2.8 5.9 17.5 18 7.3 3.