PA110BL - N-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM

Download the PA110BL datasheet PDF. This datasheet also covers the PA110BL-NIKO variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

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PA110BL n-channel enhancement mode field effect transistor by NIKO-SEM - Datasheet Preview — Note: The manufacturer provides a single datasheet file (PA110BL-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	PA110BL
Manufacturer	NIKO-SEM
File Size	240.85 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	PA110BL Datasheet

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Other Datasheets by NIKO-SEM

Part Number	Description
PA110BDA	N-Channel Enhancement Mode Field Effect Transistor
PA110BEA	N-Channel Field Effect Transistor
PA102FDG	P-Channel Logic Level Enhancement

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM N-Channel Enhancement Mode PA110BL Field Effect Transistor SOT-223 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 110mΩ 3A D G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage TC = 25 °C Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Avalanche Current Avalanche Energy L = 0.1mH Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS PD Tj, Tstg LIMITS ±20 6 3.2 2 15 6.6 2.2 2.