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PB555BA - P-Channel Enhancement Mode Field Effect Transistor

Download the PB555BA datasheet PDF. This datasheet also covers the PB555BA-NIKO variant, as both devices belong to the same p-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Pb.
  • Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PB555BA-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PB555BA
Manufacturer NIKO-SEM
File Size 248.64 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet PB555BA Datasheet

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Other Datasheets by NIKO-SEM

Part Number Description
PB521BX P-Channel Enhancement Mode Field Effect Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NIKO-SEM P-Channel Enhancement Mode PB555BA Field Effect Transistor PDFN 2x2S Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 25mΩ -8A D G Features • Pb−Free, Halogen Free and RoHS compliant. • Low RDS(on) to Minimize Conduction Losses. • Ohmic Region Good RDS(on) Ratio. • Optimized Gate Charge to Minimize Switching Losses. Applications • Protection Circuits Applications. • Logic/Load Switch Circuits Applications.