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PE552BA - N-Channel Field Effect Transistor

This page provides the datasheet information for the PE552BA, a member of the PE552BA-NIKO N-Channel Field Effect Transistor family.

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Datasheet Details

Part number PE552BA
Manufacturer NIKO-SEM
File Size 268.04 KB
Description N-Channel Field Effect Transistor
Datasheet download datasheet PE552BA Datasheet
Additional preview pages of the PE552BA datasheet.

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Full PDF Text Transcription

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NIKO-SEM N-Channel Enhancement Mode PE552BA Field Effect Transistor PDFN 3x3P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 5mΩ ID3 47A D G S D D DD #1 S S S G G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current3 TC = 100 °C TA = 25 °C Pulsed Drain Current1 TA = 70 °C Avalanche Current Avalanche Energy L = 0.1mH Power Dissipation TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VDS VGS ID IDM IAS EAS PD Tj, Tstg 20 V ±8 V 47 30 15 A 12 70 38.6 74.6 mJ 19 7 W 2 1.
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