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PE552BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 5mΩ @VGS = 4.5V
ID3 47A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Tc = 25 °C
47
Continuous Drain Current3
Tc = 100 °C TA = 25 °C
ID
30 15
Pulsed Drain Current1
TA = 70 °C
IDM
12 70
Avalanche Current
IAS 38.6
Avalanche Energy
L =0.1mH
EAS
74.6
TC = 25 °C
19
Power Dissipation
TC = 100 °C TA = 25 °C
PD
7 2
TA = 70 °C
1.3
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
60
Junction-to-Case
RqJC
6.
PE552BA Datasheet
