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PE636BA - N-Channel Field Effect Transistor

Download the PE636BA datasheet PDF. This datasheet also covers the PE636BA-NIKO variant, as both devices belong to the same n-channel field effect transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (PE636BA-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PE636BA
Manufacturer NIKO-SEM
File Size 386.55 KB
Description N-Channel Field Effect Transistor
Datasheet download datasheet PE636BA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NIKO-SEM N-Channel Enhancement Mode PE636BA Field Effect Transistor PDFN 3x3P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9mΩ ID 33A D G S D D DD #1 S S S G G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current3 TC = 100 °C TA = 25 °C Pulsed Drain Current1 TA = 70 °C Avalanche Current Avalanche Energy L = 0.1mH TC = 25 °C Power Dissipation TC = 100 °C TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VDS VGS ID IDM IAS EAS PD Tj, Tstg 30 V ±20 V 33 21 10.6 A 8.5 100 20 20 mJ 17.8 7 W 1.8 1.