PE636BA Datasheet and Specifications PDF

The PE636BA is a N-Channel Field Effect Transistor.

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Part NumberPE636BA Datasheet
ManufacturerNIKO-SEM
Overview NIKO-SEM N-Channel Enhancement Mode PE636BA Field Effect Transistor PDFN 3x3P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9mΩ ID 33A D G S D D DD #1 S S S G G : GATE D . mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 13A °C / W ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS.
Part NumberPE636BA Datasheet
DescriptionN-Channel Enhancement Mode MOSFET
ManufacturerUNIKC
Overview PE636BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9mΩ @VGS = 10V ID 33A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST COND. 13A UNITS °C / W REV 1.0 1 2015/5/29 PE636BA N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate.