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PG7A10BD - N-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the PG7A10BD, a member of the PG7A10BD-NIKO N-Channel Enhancement Mode Field Effect Transistor family.

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Part number PG7A10BD
Manufacturer NIKO-SEM
File Size 73.61 KB
Description N-Channel Enhancement Mode Field Effect Transistor
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NIKO-SEM N-Channel Enhancement Mode PG7A10BD Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 7.4mΩ ID 77A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C TC = 25 °C TC = 100 °C VDS VGS ID IDM PD TJ, Tstg 1. GATE 2. DRAIN 3. SOURCE LIMITS 100 ±20 77 49 300 96 38 -55 to 150 UNITS V V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RJC Junction-to-Ambient RJA 1Pulse width limited by maximum junction temperature. 2Package limitation current is 55A. TYPICAL MAXIMUM 1.3 62.
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