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PG7A10BF - N-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the PG7A10BF, a member of the PG7A10BF-NIKO N-Channel Enhancement Mode Field Effect Transistor family.

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Part number PG7A10BF
Manufacturer NIKO-SEM
File Size 95.00 KB
Description N-Channel Enhancement Mode Field Effect Transistor
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NIKO-SEM N-Channel Enhancement Mode PG7A10BF Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 7.4mΩ ID 47A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C TC = 25 °C TC = 100 °C VDS VGS ID IDM PD TJ, Tstg 1 23 1. GATE 2. DRAIN 3. SOURCE LIMITS 100 ±20 47 30 200 38 15 -55 to 150 UNITS V V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RJC Junction-to-Ambient RJA 1Pulse width limited by maximum junction temperature. TYPICAL MAXIMUM 3.3 62.
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