PI506BZ - N-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the PI506BZ, a member of the PI506BZ-NIKO N-Channel Enhancement Mode Field Effect Transistor family.

NIKO-SEM

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Datasheet Details

Part number	PI506BZ
Manufacturer	NIKO-SEM
File Size	198.60 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	PI506BZ Datasheet
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NIKO-SEM N-Channel Enhancement Mode PI506BZ Field Effect Transistor TO-251(IS) Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6mΩ ID 68A D G S 1 2 3 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C L = 0.1mH TC = 25 °C TC = 100 °C VDS VGS ID IDM IAS EAS PD TJ, Tstg LIMITS 30 ±20 68 43 150 30.

Published: Dec 2, 2024 |