PI506BZ - N-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM

Download the PI506BZ datasheet PDF. This datasheet also covers the PI506BZ-NIKO variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

PI506BZ n-channel enhancement mode field effect transistor by NIKO-SEM - Datasheet Preview — Note: The manufacturer provides a single datasheet file (PI506BZ-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	PI506BZ
Manufacturer	NIKO-SEM
File Size	198.60 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	PI506BZ Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
PI506BZ	MOSFET	UNIKC
PI5008KA	Surround View Monitoring Processor	Pixelplus
PI5009K	Surround View Monitoring Processor	Pixelplus
PI50F65T3H1A7	Insulate-Gate Bipolar Transistor	Prisemi
PI5A100	Precision/ Wide-Bandwidth Quad SPDT Analog Switch	Pericom Semiconductor Corporation

Other Datasheets by NIKO-SEM

Part Number	Description
PI5B3BA	P-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

NIKO-SEM N-Channel Enhancement Mode PI506BZ Field Effect Transistor TO-251(IS) Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6mΩ ID 68A D G S 1 2 3 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C L = 0.1mH TC = 25 °C TC = 100 °C VDS VGS ID IDM IAS EAS PD TJ, Tstg LIMITS 30 ±20 68 43 150 30.