PI506BZ
PI506BZ is MOSFET manufactured by UNIKC.
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 6mΩ @VGS = 10V
ID 68A
TO-251(IS)
1.GATE 2.DRAIN 3.SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
68 43 150
Avalanche Current
IAS 30.4
Avalanche Energy
L = 0.1m H
Power Dissipation
TC = 25 °C TC = 100 °C
50 20
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A m J W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Package limitation current is 40A.
SYMBOL Rq JC Rq JA
TYPICAL
MAXIMUM 2.5 62.5
UNITS °C /...
