• Part: PI5B3BA
  • Description: P-Channel Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: NIKO-SEM
  • Size: 218.30 KB
Download PI5B3BA Datasheet PDF
NIKO-SEM
PI5B3BA
PI5B3BA is P-Channel Enhancement Mode Field Effect Transistor manufactured by NIKO-SEM.
- Part of the PI5B3BA-NIKO comparator family.
Features - Pb- Free, Halogen Free and Ro HS pliant. - Low RDS(on) to Minimize Conduction Losses. - Ohmic Region Good RDS(on) Ratio. - Optimized Gate Charge to Minimize Switching Losses. Applications - Protection Circuits Applications. - Logic/Load Switch Circuits Applications. 12 3 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C L = 0.1m H TC = 25 °C TC = 100 °C VDS VGS IDM IAS EAS PD TJ, Tstg LIMITS -40 ±25 -74 -46 -150 -48.9 120 83 33 -55 to 150 UNITS V V A m J W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RJC Junction-to-Ambient RJA 1Pulse width limited by maximum junction temperature. 2Package limitation current is -55A. TYPICAL MAXIMUM 1.5 62.5 UNITS °C / W REV 1.0 G-35-3 NIKO-SEM...