Datasheet4U Logo Datasheet4U.com

PI5B3BA - P-Channel Enhancement Mode Field Effect Transistor

Download the PI5B3BA datasheet PDF. This datasheet also covers the PI5B3BA-NIKO variant, as both devices belong to the same p-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Pb.
  • Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PI5B3BA-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PI5B3BA
Manufacturer NIKO-SEM
File Size 218.30 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet PI5B3BA Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PI5008KA Surround View Monitoring Processor Pixelplus
PI5009K Surround View Monitoring Processor Pixelplus
PI506BZ MOSFET UNIKC
PI50F65T3H1A7 Insulate-Gate Bipolar Transistor Prisemi
PI5A100 Precision/ Wide-Bandwidth Quad SPDT Analog Switch Pericom Semiconductor Corporation

Other Datasheets by NIKO-SEM

Part Number Description
PI506BZ N-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NIKO-SEM P-Channel Enhancement Mode PI5B3BA Field Effect Transistor TO-251 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 8mΩ ID -74A Features • Pb−Free, Halogen Free and RoHS compliant. • Low RDS(on) to Minimize Conduction Losses. • Ohmic Region Good RDS(on) Ratio. • Optimized Gate Charge to Minimize Switching Losses. Applications • Protection Circuits Applications. • Logic/Load Switch Circuits Applications. 12 3 D G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C L = 0.