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PI5B3BA - P-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the PI5B3BA, a member of the PI5B3BA-NIKO P-Channel Enhancement Mode Field Effect Transistor family.

Datasheet Summary

Features

  • Pb.
  • Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.

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Datasheet preview – PI5B3BA

Datasheet Details

Part number PI5B3BA
Manufacturer NIKO-SEM
File Size 218.30 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet PI5B3BA Datasheet
Additional preview pages of the PI5B3BA datasheet.

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Full PDF Text Transcription

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NIKO-SEM P-Channel Enhancement Mode PI5B3BA Field Effect Transistor TO-251 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 8mΩ ID -74A Features • Pb−Free, Halogen Free and RoHS compliant. • Low RDS(on) to Minimize Conduction Losses. • Ohmic Region Good RDS(on) Ratio. • Optimized Gate Charge to Minimize Switching Losses. Applications • Protection Circuits Applications. • Logic/Load Switch Circuits Applications. 12 3 D G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C L = 0.
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