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PK6A8BA - N-Channel Enhancement Mode Field Effect Transistor

Download the PK6A8BA datasheet PDF. This datasheet also covers the PK6A8BA-NIKO variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (PK6A8BA-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PK6A8BA
Manufacturer NIKO-SEM
File Size 334.59 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet PK6A8BA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NIKO-SEM N-Channel Enhancement Mode PK6A8BA Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 5.5mΩ ID 46A D G S D D DD #1 S S S G G. GATE D. DRAIN S. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Pulsed Drain Current1 TC = 25 °C TC = 100 °C Continuous Drain Current TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy L = 0.1mH Power Dissipation TC = 25 °C TC = 100 °C Power Dissipation4 TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VDS VGS ID IDM ID IAS EAS PD PD Tj, Tstg LIMITS 40 ±20 52 33 100 19 15 35 61 31 12.5 4 2.