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PK632BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3.3mΩ @VGS = 10V
ID 88A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current3 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
88 70 150
Continuous Drain Current
TA = 25 °C TA= 70 °C
ID
27 22
Avalanche Current
IAS 40
Avalanche Energy
L =0.1mH
EAS
80
Power Dissipation
TC = 25 °C TC = 100 °C
PD
46 29
Power Dissipation4
TA = 25 °C TA = 70 °C
PD
4.6 2.
PK632BA Datasheet
