PK632BA Datasheet and Specifications PDF

NIKO-SEM N-Channel Enhancement Mode PK632BA Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3.3mΩ ID 78A D G S D DDD #1 S S S G G. GATE D.

3.4 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 40A. 4The Power dissipation is based on RJA t ≦10s value. REV1.1 1 E-2.

PK632BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3.3mΩ @VGS = 10V ID 88A PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CO.

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