GT100PI120T6H-T4M Overview
Conditions Min Typ Max Unit VGE(th) Gate-Emitter Threshold Voltage VCE(sat) Collector-Emitter Saturation Voltage ICES Collector-Emitter Leakage Current IGES Gate-Emitter Leakage Current Cies Input Capacitance Coes Output Capacitance Cres Reveres Transfer.
GT100PI120T6H-T4M Key Features
- Field Stop Trench Gate IGBT
- Short Circuit Rated>10μs
- Low Saturation Voltage
- Low Switching Loss
- 100% RBSOA Tested（2×Ic）
- Low Stray Inductance
- Lead Free, pliant with RoHS Requirement