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GT100PI120T6H-T4M - IGBT

General Description

Conditions Min Typ Max Unit VGE(th) Gate-Emitter Threshold Voltage VCE(sat) Collector-Emitter Saturation Voltage ICES Collector-Emitter Leakage Current IGES Gate-Emitter Leakage Current Cies Input Capacitance Coes Output Capacitance Cres Reveres Transfer Capacitance IC=1mA, VCE=V

Key Features

  • Field Stop Trench Gate IGBT.
  • Short Circuit Rated>10μs.
  • Low Saturation Voltage.
  • Low Switching Loss.
  • 100% RBSOA Tested（2×Ic）.
  • Low Stray Inductance.
  • Lead Free, Compliant with RoHS Requirement.

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Full PDF Text Transcription (Reference)

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GT100PI120T6H-T4M IGBT Module Features：  Field Stop Trench Gate IGBT  Short Circuit Rated>10μs  Low Saturation Voltage  Low Switching Loss  100% RBSOA Tested（2×Ic）  Low Stray Inductance  Lead Free, Compliant with RoHS Requirement Applications：  Industrial Inverters  Servo Applications IGBT, Inverter Maximum Rated Values(TC=25℃unless otherwise specified) VCES VGES IC ICM tSC PD Collector-Emitter Blocking Voltage Gate-Emitter Voltage Continuous Collector Current Peak Collector Current Repetitive Short Circuit Withstand Time Maximum Power Dissipation (IGBT) TC=100℃ TC=25℃ TJ=175℃ TC=25℃ TJmax=175℃ 1200 V ±20 V 100 A 200 A 200 A >10 μs 714 W www.njsme.com 2019 NJSME All rights reserved Page 1 REV.