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GT10PI120B3H - IGBT

General Description

VGE(th) Gate-Emitter Threshold Voltage Conditions IC = 1 mA, VCE = VGE Min Typ Max Unit 4.5 5.5 6.0 V VCE(sat) Collector-Emitter Saturation Voltage ICES Collector-Emitter Leakage Current IGES Gate-Emitter Leakage Current Cies Input Capacitance Coes Output Capacitance IC = 10 A, VGE

Key Features

  • z Short Circuit Rated>10μs z Field Stop Trench Gate IGBT z Low Saturation Voltage z Low Switching Loss z 100% RBSOA Tested（2×Ic） z Low Stray Inductance z Lead Free, Compliant with RoHS Requirement.

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Datasheet Details

Part number GT10PI120B3H
Manufacturer NJSME
File Size 712.39 KB
Description IGBT
Datasheet download datasheet GT10PI120B3H Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GT10PI120B3H IGBT Module Features： z Short Circuit Rated>10μs z Field Stop Trench Gate IGBT z Low Saturation Voltage z Low Switching Loss z 100% RBSOA Tested（2×Ic） z Low Stray Inductance z Lead Free, Compliant with RoHS Requirement Applications： z Industrial Inverters z Servo Applications IGBT, Inverter Maximum Rated Values (TC=25℃unless otherwise specified) VCES VGES IC ICM tSC PD Collector-Emitter Blocking Voltage Gate-Emitter Voltage Continuous Collector Current Repetitive Peak Collector Current Short Circuit Withstand Time Maximum Power Dissipation per IGBT TC = 100℃ TC = 25℃ TJ = 175℃ TC = 25℃ TJmax=175℃ 1200 V ±20 V 10 A 20 A 20 A >10 μs 150 W www.njsme.com 2019 NJSME All rights reserved Page 1 Rev.