GT10PI120B3H Datasheet PDF

FEATURES

： z Short Circuit Rated>10μs z Field Stop Trench Gate IGBT z Low Saturation Voltage z Low Switching Loss z 100% RBSOA Tested（2×Ic） z Low Stray Inductance z Lead Free, Compliant with RoHS Requirement

APPLICATIONS

： z Industrial Inverters z Servo

APPLICATIONS

IGBT, Inverter Maximum Rated Values (TC=25℃unless otherwise specified) VCES VGES IC ICM tSC PD Collector-Emitter Blocking Voltage Gate-Emitter Voltage Continuous Collector Current Repetitive Peak Collector Current Short Circuit Withstand Time Maximum Power Dissipation per IGBT TC = 100℃ TC = 25℃ TJ = 175℃ TC = 25℃ TJmax=175℃ 1200 V ±20 V 10 A 20 A 20 A >10 μs 150 W 2019 NJSME All rights reserved Page 1 Rev. A 07/08/2019

ELECTRICAL CHARACTERISTICS

of IGBT (TC=25℃unless otherwise specified) Static Characteristics Symbol

DESCRIPTION

VGE(th) Gate-Emitter Threshold Voltage Conditions IC = 1 mA, VCE = VGE Min Typ Max Unit 4.5 5.5 6.0 V VCE(sat) Collector-Emitter Saturation Voltage ICES Collector-Emitter Leakage Current IGES Gate-Em...