NSM2013-Q1 Datasheet | NOVOSENSE

NSM2013-Q1 High-Accuracy, Hall-Effect-Based Current Sensor IC with mon-Mode Field Rejection in 5k V High-Isolation Datasheet (EN) 1.1 Product Overview NSM2013-Q1 is an integrated path current sensor with a very low on-resistance of 0.85mΩ, reducing heat loss on the chip. NOVOSENSE innovative isolation technology and signal conditioning design can meet high isolation levels while sensing the current flowing through the internal Busbar. A differential Hall pair is used internally, so it has a strong immunity to external stray magnetic fields. NSM2013-Q1 senses the magnetic field generated by the Busbar current flowing under the chip to indirectly detect the current. pared with the current sampling method of the Shunt+ isolated op-amp, NSM2013-Q1 eliminates the need for the primary side power supply and has a simple and convenient layout. At the same time, it has extremely high isolation withstand voltage and Lifetime stability. In high-side current monitoring applications, NSM2013Q1 can reach a working voltage of 1550Vpk, and it can withstand 10k V surge voltage and 13k A surge current without adding any protection devices. The NSM2013-Q1 has a pseudo-differential output mode (fixed output) with a fixed sensitivity that does not vary with the supply voltage, eliminating LDO on the system, making BOM simpler. Due to NSM2013-Q1 internal accurate temperature pensation algorithm and factory accuracy calibration, this current sensor can maintain good accuracy in the full temperature working range, and the customer does not need to do secondary programming or calibration. Support 3.3V/5V power supply (different version) Key Features - High bandwidth and fast response time - 240k Hz bandwidth - 2.2µs response time - High-precision current measurement - Differential Hall sets can immune stray field - High isolation level that meets UL standards Copyright © 2025 NOVOSENSE - Maximum repeated isolation withstand voltage (VIROM): 1550Vpk - Maximum working isolation...