NSM2013-Q1 Description
NSM2013-Q1 High-Accuracy, Hall-Effect-Based Current Sensor IC with mon-Mode Field Rejection in 5kV High-Isolation Datasheet (EN) 1.1 Product Overview NSM2013-Q1 is an integrated path current sensor with a very low on-resistance of 0.85mΩ, reducing heat loss on the chip. NOVOSENSE innovative isolation technology and signal conditioning design can meet high isolation levels while sensing the current flowing through...
NSM2013-Q1 Key Features
- High bandwidth and fast response time
- 240kHz bandwidth
- 2.2µs response time
- High-precision current measurement
- Differential Hall sets can immune stray field
- High isolation level that meets UL standards
- Maximum repeated isolation withstand voltage (VIROM): 1550Vpk
- Maximum working isolation withstand voltage (VIOWM): 1097Vrms
- Withstand isolation voltage (VISO): 5000Vrms
- Maximum surge isolation withstand voltage (VIOSM)