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NTE573 - Schottky Barrier Rectifier

Description

The NTE573 is an axial lead metal to

silicon power diode using the Schottky Barrier principle.

of the art geometry

Features

  • epitaxial construction with oxide passivation and metal overlap contact. This device is ideally suited for use in low.
  • voltage, high.
  • frequency inverters, as free wheeling diodes, and polarity protection diodes. Features: D Low Forward Voltage D Low Power Loss D High Surge Capacity D Low Stored Charge Majority Carrier Conduction D High Efficiency D High Switching Capability Absolute Maximum Ratings: Peak Repetitive Reverse Voltage, VRRM.

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Datasheet Details

Part number NTE573
Manufacturer NTE Electronics
File Size 57.55 KB
Description Schottky Barrier Rectifier
Datasheet download datasheet NTE573 Datasheet
Additional preview pages of the NTE573 datasheet.

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Full PDF Text Transcription

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NTE573 Schottky Barrier Rectifier Description: The NTE573 is an axial lead metal–to–silicon power diode using the Schottky Barrier principle. State– of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. This device is ideally suited for use in low–voltage, high–frequency inverters, as free wheeling diodes, and polarity protection diodes. Features: D Low Forward Voltage D Low Power Loss D High Surge Capacity D Low Stored Charge Majority Carrier Conduction D High Efficiency D High Switching Capability Absolute Maximum Ratings: Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Working Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . .
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