NTE573 Datasheet | NTE Electronics

NTE573 Schottky Barrier Rectifier Description: The NTE573 is an axial lead metal- to- silicon power diode using the Schottky Barrier principle. State- of- the- art geometry Features epitaxial construction with oxide passivation and metal overlap contact. This device is ideally suited for use in low- voltage, high- frequency inverters, as free wheeling diodes, and polarity protection diodes. Features : D Low Forward Voltage D Low Power Loss D High Surge Capacity D Low Stored Charge Majority Carrier Conduction D High Efficiency D High Switching Capability...