Part NTE584
Description Silicon Schottky Diode
Category Diode
Manufacturer NTE Electronics
Size 15.77 KB
Pricing from 8.734 USD, available from Onlinecomponents.com and TME.
NTE Electronics

NTE584 Overview

Key Specifications

Mount Type: Stud
Pins: 2
Max Operating Temp: 175 °C
Min Operating Temp: -65 °C

Description

The NTE584 is a metal to silicon junction diode in a DO35 type package featuring high breakdown, low turn–on voltage and ultrafast switching primarily intended for high level UHF/VHF detection and pulse application with broad dynamic range. Parameter Static Characteristic Breakdown Voltage Forward Voltage Continuous Reverse Current Dynamic Characteristic Overvoltage Coefficient Minority Carrier Life Time C τ VR = 0V, f = 1MHz IF = 5mA, Krakauer Method – – – – 1.2 100 pF ps V(BR) VF IR IR = 10µA IF = 1mA, Note 2 IF = 35mA, Note 2 VR = 15V, Note 2 20 – – – – – – – – 0.41 1.0 0.1 V V V µA Symbol Test Conditions Min Typ Max Unit Note 2.

Price & Availability

Seller Inventory Price Breaks Buy
Onlinecomponents.com 2 5+ : 8.734 USD
25+ : 6.92 USD
100+ : 6.06 USD
250+ : 5.7 USD
View Offer
TME 4 1+ : 6.52 USD
3+ : 5.86 USD
10+ : 5.18 USD
25+ : 4.98 USD
View Offer