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NTE6093 - Silicon Rectifier Dual / Schottky Barrier

General Description

The NTE6093 is a silicon rectifier in a TO3P type package designed using the Schottky Barrier principle with a Molybenum barrier metal.

Key Features

  • D Low Forward Voltage D Guard.
  • Ring for Stress Protection D Low Power Loss & High Efficiency D Guarantee Reverse Avalanche D +125°C Operating Junction Temperature D High Surge Capacity D Low Storied Charge majority Carrier Conduction D Low Switching Noise Absolute Maximum Ratings: Peak Repetitive Reverse Voltage, VRRM.
  • . . 60V Working Peak Reverse Voltage, VRWM.

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Datasheet Details

Part number NTE6093
Manufacturer NTE Electronics (defunct)
File Size 18.03 KB
Description Silicon Rectifier Dual / Schottky Barrier
Datasheet download datasheet NTE6093 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE6093 Silicon Rectifier Dual, Schottky Barrier Description: The NTE6093 is a silicon rectifier in a TO3P type package designed using the Schottky Barrier principle with a Molybenum barrier metal. Features: D Low Forward Voltage D Guard–Ring for Stress Protection D Low Power Loss & High Efficiency D Guarantee Reverse Avalanche D +125°C Operating Junction Temperature D High Surge Capacity D Low Storied Charge majority Carrier Conduction D Low Switching Noise Absolute Maximum Ratings: Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Working Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V DC Blocking Voltage, VR . . . . . . . .