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NTE6411 - Bilateral Trigger Diodes (DIACS)

General Description

The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics from 28V to 63V.

to conduction state for either polarity of applied voltage whenever the amplitude of applied voltage exceeds the breakover vo

Key Features

  • D Glass.
  • Chip Passivation D DO35 Type Trigger Package D Wide Voltage Range Selection Absolute Maximum Ratings: Maximum Trigger Firing Capacitance.
  • . . 0.1µF Device Dissipation (TA =.
  • 40° to +40°C), PD.
  • 250mW Derate Above +40°C.
  • . . 3.6mW/°C Ope.

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Datasheet Details

Part number NTE6411
Manufacturer NTE Electronics (defunct)
File Size 18.72 KB
Description Bilateral Trigger Diodes (DIACS)
Datasheet download datasheet NTE6411 Datasheet

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Part Number Description
NTE6410 Unijunction Transistor (UJT)
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE6407, NTE6408, NTE6411, NTE6412 Bilateral Trigger Diodes (DIACS) Description: The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics from 28V to 63V. These devices are triggered from a blocking–to–conduction state for either polarity of applied voltage whenever the amplitude of applied voltage exceeds the breakover voltage rating of the DIAC. Features: D Glass–Chip Passivation D DO35 Type Trigger Package D Wide Voltage Range Selection Absolute Maximum Ratings: Maximum Trigger Firing Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1µF Device Dissipation (TA = –40° to +40°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW Derate Above +40°C . . .