NTE6508 Datasheet Integrated Circuit CMOS / 1k Static Ram (sram)

Manufacturer: NTE Electronics (defunct)

Overview: NTE6508 Integrated Circuit CMOS, 1K Static RAM (SRAM).

Datasheet Details

Part number	NTE6508
Manufacturer	NTE Electronics (defunct)
File Size	37.57 KB
Description	Integrated Circuit CMOS / 1K Static RAM (SRAM)
Datasheet	NTE6508_NTEElectronics.pdf

General Description

: The NTE6508 is a 1024 x 1 fully static CMOS RAM in a 16–Lead DIP type package fabricated using self–aligned silicon gate technology.

Synchronous circuit design techniques are employed to acheive high performance and low power operation.

On chip latches are provided for address allowing effecient interfacing with microprocessor systems.

Key Features

D Low Power Standby: 50µW Max D Low Power Operation: 20mW/MHz Max D Fast Access Time: 300ns Max D Data Retention: 2V Min D TTL Compatible Input/Output D High Output Drive: 2 TTL Loads D On.
Chip Address Register Absolute Maximum Ratings: (Note 1) Supply Voltage.
. . . . +7V Input, Output or I/O Voltage.
. . . . G.

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