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NTE929 - Integrated Circuit General Purpose / High Current / NPN Transistor Array

General Description

The NTE929 is a versatile array of five high

current (to 100mA) NPN transistors on a common monolithic substrate.

In addition, two of these transistors (Q1 and Q2) are matched at low currents (i.e.

1mA) for applications in which offset parameters are of special importance.

Key Features

  • D High IC 100mA max D Low VCEsat (at 50mA) 0.7V max. D Matched pair (Q1 and Q2) V10 (VBE matched): ±5mV max. I10 (at 1mA): 2.5µA max. D 5 independent transistors plus separate substrate connection.

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Datasheet Details

Part number NTE929
Manufacturer NTE Electronics (defunct)
File Size 23.93 KB
Description Integrated Circuit General Purpose / High Current / NPN Transistor Array
Datasheet download datasheet NTE929 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE929 Integrated Circuit General Purpose, High Current, NPN Transistor Array Description: The NTE929 is a versatile array of five high–current (to 100mA) NPN transistors on a common monolithic substrate. In addition, two of these transistors (Q1 and Q2) are matched at low currents (i.e. 1mA) for applications in which offset parameters are of special importance. Independent connections for each transistors plus a separate terminal for the substrate permit maximum flexibility in circuit design. Features: D High IC 100mA max D Low VCEsat (at 50mA) 0.7V max. D Matched pair (Q1 and Q2) V10 (VBE matched): ±5mV max. I10 (at 1mA): 2.5µA max. D 5 independent transistors plus separate substrate connection.