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NTE998 - Integrated Circuit 1.22V Reference Diode

General Description

The NTE998 is a temperature compensated low voltage reference device in a TO92 type package.

A single monolithic structure is obtained by utilizing transistors and thin film resistors.

Key Features

  • D Low Breakdown Voltage: 1.220V typ D Low Bias Current: 50µA D Temperature Stability: .005 to .01%/°C Absolute Maximum Ratings: Power Dissipation (free air).
  • . . . . 600mW Linear Derating Factor.
  • . . . 5mW/°C Forward Current.

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Datasheet Details

Part number NTE998
Manufacturer NTE Electronics (defunct)
File Size 19.69 KB
Description Integrated Circuit 1.22V Reference Diode
Datasheet download datasheet NTE998 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE998 Integrated Circuit 1.22V Reference Diode Description: The NTE998 is a temperature compensated low voltage reference device in a TO92 type package. A single monolithic structure is obtained by utilizing transistors and thin film resistors. Benefits of this construction is low noise, low current, and good long term stability associated with modern integrated circuits. These characteristics make this device ideal for applications in battery operated equipment or where low power is necessary. Features: D Low Breakdown Voltage: 1.220V typ D Low Bias Current: 50µA D Temperature Stability: .005 to .01%/°C Absolute Maximum Ratings: Power Dissipation (free air) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .