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2N5686 - Silicon NPN Transistor

General Description

The 2N5686 is a NPN power transistor a TO

3 type case designed for use in high power amplifier and switching circuit applications.

Key Features

  • D High Current Capability: IC = 50A (Continuous) D DC Current Gain: hFE= 15 to 60 @ IC = 25Adc D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 1V Max @ IC = 25Adc Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 80V Collector.
  • Base Voltage, VCB.
  • . . 80V Emitter.

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Datasheet Details

Part number 2N5686
Manufacturer NTE Electronics (defunct)
File Size 61.07 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2N5686 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N5686 Silicon NPN Transistor High Power, High Current Switch TO−3 Type Package Description: The 2N5686 is a NPN power transistor a TO−3 type case designed for use in high power amplifier and switching circuit applications. Features: D High Current Capability: IC = 50A (Continuous) D DC Current Gain: hFE= 15 to 60 @ IC = 25Adc D Low Collector−Emitter Saturation Voltage: VCE(sat) = 1V Max @ IC = 25Adc Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . .