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2N6109 - Silicon PNP Transistor

General Description

The 2N6109 is a silicon PNP transistor in a TO

220 type package designed for use in general purpose amplifier and switching applications.

Key Features

  • D DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 50V Min D High Current.
  • Gain Bandwidth Product: fT = 10MHz Min @ IC = 500mA Absolute Maximum Ratings: (Note 1) Collector.
  • Emitter Voltage, VCEO.
  • . . . . 50V Collector.
  • Base Voltage, VCB.

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Datasheet Details

Part number 2N6109
Manufacturer NTE Electronics (defunct)
File Size 64.85 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2N6109 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N6109 Silicon PNP Transistor Audio Power Output and Medium Power Switching TO−220 Type Package Description: The 2N6109 is a silicon PNP transistor in a TO−220 type package designed for use in general purpose amplifier and switching applications. Features: D DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 50V Min D High Current−Gain Bandwidth Product: fT = 10MHz Min @ IC = 500mA Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .