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2N6109 - PNP Transistor

General Description

DC Current Gain- : hFE = 30-150@ IC= -2.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -50V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications ABSOL

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6109 DESCRIPTION ·DC Current Gain- : hFE = 30-150@ IC= -2.