Datasheet Details
| Part number | 2N6103 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.67 KB |
| Description | NPN Transistor |
| Datasheet | 2N6103-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2N6103.
| Part number | 2N6103 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.67 KB |
| Description | NPN Transistor |
| Datasheet | 2N6103-INCHANGE.pdf |
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·DC Current Gain - : hFE = 15-60@ IC= 8A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in medium power liner amplifier and switching service in consumer ,automotive and industrial applications.
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ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 16 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 75 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N6103 | Power Transistors | RCA |
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2N6103 | Silicon Power Transistor | SavantIC |
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