STMicroelectronics 2N6107
The 2N6107 and 2N6111 are epitaxial-base PNP silicon transistors in Jedec TO-220 plastic package. They are intended for a wide variety of medium power switching and linear applications.| Part No. | 2N6107 |
|---|---|
| Datasheet | 2N6107 Download |
| Manufacturer |  STMicroelectronics |
| Description | SILICON PNP SWITCHING TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
: LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 1 2 TO-220DESCRIPTION
INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEX V CEO V EBO IC IB P tot T stg Tj Parameter 2N6107 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (R BE = 100 Ω ) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c = 25 C Storage Temperature Max. Operating Junction Temperature o Value 2N6111 40 40 30 5 7 3 40 -65 to 150 150 80 80 70 Unit V V V V A A W o o C C For PNP devices voltage and current values are negative June 1997 1/4 2N6107/2N6111 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.12 70 o o C/W C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CEX Parameter Collector Cut-off Current (V BE = - 1.5V) for for TC for for Test Conditions 2N6107 2N6111 o = 150 C 2N6107 2N6111 V CE = 80 V V CE = 40 V V CE = 70 V V CE = 30 V V CE = 60 V V CE = 20 V Min.
