2N6107 Overview
Description
The CENTRAL SEMICONDUCTOR 2N6107, 2N6288 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose power amplifier and switching applications. MARKING: FULL PART NUMBER TO-220 CASE SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N6111 2N6109 2N6107 2N6288 2N6290 2N6292 40 60 80 30 50 70 5.0 7.0 10 3.0 40 -65 to +150 3.13 SYMBOL TEST CONDITIONS MIN ICEV VCE=Rated VCEO, VEB=1.5V ICEV VCE=Rated VCEO, VEB=1.5V, TC=150°C ICEO VCE=20V (2N6111, 2N6288) ICEO.
