2N6107 Datasheet

The 2N6107 is a SILICON PNP SWITCHING TRANSISTORS.

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Part Number2N6107
ManufacturerSTMicroelectronics
Overview The 2N6107 and 2N6111 are epitaxial-base PNP silicon transistors in Jedec TO-220 plastic package. They are intended for a wide variety of medium power switching and linear applications. INTERNAL SCHEM. hermal Resistance Junction-ambient Max Max 3.12 70 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX Parameter Collector Cut-off Current (V BE = - 1.5V) for for TC for for Test Conditions 2N6107 2N6111 o = 150 C 2N6107 2N6111 V CE = 80 V V CE = 40 V V C.
Part Number2N6107
Description(2N6107 - 2N6111) Silicon PNP Power Transistors
ManufacturerSavantic
Overview ·With TO-220 package ·Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS ·Power amplifier and switching circuits applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to moun. uct Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6107 VCEO(SUS) Collector-emitter sustaining voltage 2N6109 2N6111 VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage 2N6107 ICEO Collector cut-off current 2N6109 2N6111 .
Part Number2N6107
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·DC Current Gain- : hFE = 30-150@ IC= -2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -70V(Min) ·Complement to Type 2N6292 ·Minimum Lot-to-Lot variations for robust device performance and reli. stor 2N6107 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -3A VBE(on) Base-Emitter On Voltage ICEX Collector Cutoff Current .
Part Number2N6107
DescriptionCOMPLEMENTARY SILICON POWER TRANSISTORS
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR 2N6107, 2N6288 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose power amplifier and switchi. .

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