Datasheet Summary
PNP Epitaxial Silicon Transistor
Features z DC Curent Gain Specified to 7A. z Collector-Emitter Sustaining Voltage. z High Current Gain.
Pb
Lead-free
Production specification
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
-80 V
VCEO VEBO IC IB PC Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage Collector Current
Base Current
Continuous Peak
Collector Dissipation
Junction and Storage Temperature
-70 V
-5 V -7
A -10 3A
2W
-65 to +150 ℃
X029 Rev.A
.gmicroelec. 1
Production specification
PNP Epitaxial Silicon Transistor
ELECTRICAL CHARACTERISTICS...
