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2N6100 - NPN Transistor

General Description

DC Current Gain - : hFE = 20-80@ IC= 5A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 70V(Min) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switchi

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isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 20-80@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 70V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications.